Upcoming Events 2012
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IMPACT Workshop Fri. Jan 27, 2012 Globalfoundries 690 N. McCarthy Milpitas, CA |
IMPACT Seminars IMPACT seminars were very successful. Seminar Archive |
Project Management
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Principal Investigator Kameshwar Poolla 5141 Etchevery 510.642.4642 office 510.642.2739 fax poolla@berkeley.edu |
Systems Support Michael Martin 242 Sutardja Dai Hall 510.809.8634 office 510.809.8699 fax mmartin@eecs.berkeley.edu |
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Contract Management Diana Duong 558 Cory Hall, ERSO 510.643.9665 office 510.642.2739 fax snoflake@erso.berkeley.edu |
Administrative Support Charlotte Jones 558 Cory Hall, ERSO 510.643.2834 office 510.642.2739 fax cmjones@erso.berkeley.edu |
The ability to assess image quality, control interactions between features, and compensate for lateral diffusion spreading during lithography is essential to enhancing the fundamental limits on SFR. In this project, we focus on creative, high-risk, high-payoff techniques involving metrology, control, masks, optics, and resists for enhancing lithography resolution and capability.
Plasma instabilities and high electron temperatures in inductively driven plasma reactors are important factors limiting process reproducibility, uniformity, and selectivity during etch/deposition for larger-size wafers. This project focuses on novel methods to sense, measure, model, and control plasmas used in the manufacture of deep-submicron features over large substrates.
A comprehensive model of CMP will allow the prediction of feature-pattern evolution, the design of optimal process recipes, and the understanding of the CMP-imposed limits on SFR. Such a model is the focus of our comprehensive, multi-disciplinary approach to this problem.
Our studies focus on improved compact models for device variations, PLL circuits and model development, proof-of-concept implementation, new interactions of layout and process, evaluation of statistical optimization of leakage, incorporating random variability to DFM,
and design-mask interactions.
Our research focuses on performing 3-D device simulations to assess the impact of LER on tri-gate bulk MOSFET performance, assessing the relative impact of sources of variation for tri-gate bulk MOSFETs, completing dopant and self-diffusion in relaxed SiGe using MBE-grown isotopically controlled layered structures, studying dopant and self-diffusion in Ge using isotopically controlled structures, demonstrating layer transfer of Si, Ge, and strained Si/Ge on patterned uniaxial strain substrates, electrical characterization of carrier transport and interfacial properties of SSOI and GeOI designing and prototyping of refractive index optical stack for spectroscopy capability and calibration of wavelength dispersion and photon intensity.